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| STW43NM50N N-channel 500 V, 0.070 37 A MDmeshTM II Power MOSFET , TO-247 Features Type STW43NM50N VDSS @ Tjmax 550 V RDS(on) max < 0.085 ID 37 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 TO-247 Application Switching applications Description This series of devices implements second generation MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking 43NM50N Package TO-247 Packaging Tube STW43NM50N January 2010 Doc ID 14168 Rev 5 1/12 www.st.com 12 Contents STW43NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 14168 Rev 5 STW43NM50N Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value 500 25 37 23 148 255 15 -55 to 150 150 Unit V V A A A W V/ns C C PTOT dv/dt (2) Tstg Tj 1. Pulse width limited by safe operating area 2. ISD 37 A, di/dt 400 A/s, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 0.49 50 300 Unit C/W C/W C Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting TJ=25 C, ID=IAS, VDD=50 V) Value 15 1000 Unit A mJ Doc ID 14168 Rev 5 3/12 Electrical characteristics STW43NM50N 2 Electrical characteristics (TCASE=25 C unless otherwise specified) Table 5. Symbol V(BR)DSS dv/dt (1) IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDD= 400 V, ID = 37 A, VGS=10 V VDS = Max rating VDS = Max rating, @125 C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 18.5 A 2 3 Min. 500 30 1 100 100 4 Typ. Max. Unit V V/ns A A nA V 0.070 0.085 1. Characteristic value at turn off on inductive load Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Qg Qgs Qgd Rg Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS=15 V, ID = 18.5 A VDS = 50 V, f = 1 MHz, VGS = 0 Min. Typ. 18 4200 290 20 590 140 72 23 1.4 Max. Unit S pF pF pF - - VGS = 0, VDS = 0 to 400 V VDD = 400 V, ID = 37 A, VGS = 10 V, (see Figure 15) f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain - - pF nC nC nC - - - - 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/12 Doc ID 14168 Rev 5 STW43NM50N Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 250 V, ID = 18.5 A RG = 4.7 VGS = 10 V (see Figure 14) Min. Typ. 30 20 140 42 Max. Unit ns ns ns ns - - Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 37 A, VGS = 0 ISD = 37 A, di/dt = 100 A/s VDD = 60 V (see Figure 16) ISD = 37 A, di/dt = 100 A/s VDD = 60 V, Tj = 150 C (see Figure 16) Test conditions Min 530 11 42 630 14 45 Typ. Max 37 148 1.5 Unit A A V ns C A ns C A - 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% Doc ID 14168 Rev 5 5/12 Electrical characteristics STW43NM50N 2.1 Figure 2. ID (A) Electrical characteristics (curves) Safe operating area AM00875v1 Figure 3. Thermal impedance 100 th is ea ar R D is S( o n) 10s 10 n tio by m ra pe ited Om li in ax 100s 1ms 10ms 1 0.1 0.1 1 10 100 VDS(V) Figure 4. ID (A) Output characteristics AM00874v1 Figure 5. ID (A) 10 8 Transfer characteristics AM00873v1 VGS=10V 7V 100 80 6V 60 6 4 5V 40 20 2 0 0 0 0 5 10 15 20 25 30 VDS(V) 2 4 6 8 10 VGS(V) Figure 6. Gfs(S) Transconductance AM00868v1 Figure 7. RDS(on) () 0.74 Static drain-source on resistance AM00870v1 -50C 25C 150C 20.5 VGS=10V ID=18.5A 15.5 0.72 10.5 0.70 5.5 0.68 0.5 0 0.66 5 10 15 20 25 30 ID(A) 5 10 15 20 25 30 ID(A) 6/12 Doc ID 14168 Rev 5 STW43NM50N Figure 8. VGS (V) 12 10 8 1000 6 4 2 0 0 50 100 150 Qg(nC) 10 0.1 1 100 VDS=50V f=1MHz VGS=0 Electrical characteristics Capacitance variations AM00871v1 Gate charge vs gate-source voltage Figure 9. AM00872v1 VDD=400V VGS=10V ID=37A C (pF) 10000 Ciss Coss Crss 10 100 ID(A) Figure 10. Normalized gate threshold voltage vs temperature VGS(th) (norm) 1.1 AM00866v1 Figure 11. Normalized on resistance vs temperature v RDS(on) (norm) AM00867v1 VDS=VGS ID=250A 2.1 VGS=10V ID=18.5A 1.0 1.7 0.9 1.3 0.8 0.9 0.7 -25 0 25 50 75 100 TJ(C) 0.5 -25 0 25 50 75 100 TJ(C) Figure 12. Source-drain diode forward characteristics VSD (V) 1.0 25C 150C 0.8 AM00876v1 Figure 13. Normalized BVDSS vs temperature BVDSS (norm) AM00869v1 -50C ID=1mA 1.05 1.01 0.6 0.97 0.4 0 10 20 30 ISD(A) 0.93 -25 0 25 50 75 100 TJ(C) Doc ID 14168 Rev 5 7/12 Test circuits STW43NM50N 3 Test circuits Figure 15. Gate charge test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 8/12 Doc ID 14168 Rev 5 STW43NM50N Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Doc ID 14168 Rev 5 9/12 Package mechanical data STW43NM50N TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S 10/12 Doc ID 14168 Rev 5 STW43NM50N Revision history 5 Revision history Table 9. Date 15-Nov-2007 04-Aug-2008 15-Oct-2008 27-Jan-2009 08-Jan-2010 Document revision history Revision 1 2 3 4 5 First release Document status promoted from preliminary data to datasheet 2.1: Electrical characteristics (curves) has been corrected VGS value has been corrected in Table 2 Updated VGS on Table 2: Absolute maximum ratings. Changes Doc ID 14168 Rev 5 11/12 STW43NM50N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 14168 Rev 5 |
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